smd esd protection diode page 1 comchip t echnology co., l td. CPDVR083V3UA rohs device features - w orking voltage: 3.3v - low leakage current. - low operating and clamping voltages. mechanical data - case: sot -383f standard package,molded plastic. - t erminals: gold plated, solderable per mil-std-750,method 2026. - mounting position: any circuit diagram package 1 2 3 4 sot -383f 0 . 0 8 6 ( 2 . 2 0 ) 0 . 0 7 9 ( 2 . 0 0 ) 0 . 0 6 7 ( 1 . 7 0 ) 0 . 0 5 9 ( 1 . 5 0 ) 0 . 0 2 4 ( 0 . 6 0 ) 0 . 0 1 8 ( 0 . 4 5 ) 0 . 0 1 2 ( 0 . 3 0 ) t y p . 8 7 6 5 gnd 0 . 0 5 9 ( 1 . 5 0 ) t y p . 0 . 0 0 8 ( 0 . 2 0 ) t y p . 5 6 7 8 4 3 2 1 gnd rev :b qw -a7029 dimensions in inches and (millimeters) 0 . 0 1 4 ( 0 . 3 5 ) t y p . c o m c h i p s m d d i o d e s p e c i a l i s t - iec61000-4-2 (esd)15kv(contact),20kv(air).
page 2 comchip t echnology co., l td. smd esd protection diode kv a w 20 5 40 esd i pp p pp c -55 to +125 -55 to +125 t j operating temperature esd per iec 61000-4-2(air) peak pulse current ( tp = 8/20 us) peak pulse power ( tp = 8/20 us) parameter symbol v alue unit maximum rating (at t a =25 c unless otherwise noted) esd per iec 61000-4-2(contact) storage temperature t stg 15 c v v 3.3 v pt v r wm punch-through voltage reverse stand-off voltage parameter conditions symbol min t yp ma x unit i pt = 2ua o electrical characteristics (at t a =25 c unless otherwise noted) snap-back voltage i sb = 50ma v sb leakage current v r = 3.3v v i l 2.8 clamping voltage i pp any channel pin to ground = 1 a, tp=8/20us, v c v 0.5 0.05 3.5 5.5 ua i pp any channel pin to ground = 5 a, tp=8/20us, v c v 8.0 i ppr ground to any channel pin = 1 a, tp=8/20us, v cr v 2.4 reverse clamping voltage junction capacitance v r any channel pin to ground = 0 v , f = 1mhz c j pf 30 v r = 3.3 v , f = 1mhz any channel pin to ground c j pf 14 25 rev :b qw -a7029 c o m c h i p s m d d i o d e s p e c i a l i s t
page 3 comchip t echnology co., l td. smd esd protection diode ra ting and characteristic cur ves (CPDVR083V3UA) fig. 2 - power rating derating curve p o w e r r a t i n g , ( % ) 0 ambient temperature, (c ) 0 1 0 0 5 0 2 5 1 2 5 7 5 1 5 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 1 1 0 fig. 1 - non-repetitive max. peak pulse power vs. pulse time m a x . p e a k p u l s e p o w e r - p p p ( k w ) pulse duration-tp(us) 0 . 1 1 1 0 1 0 0 0 . 1 1 0 . 0 1 1 0 0 0 fig.3 - clamping voltage vs. peak pulse current c l a m p i n g v o l t a g e , ( v ) peak pulse current,(a) 0 0 1 2 3 4 5 6 1 6 1 4 1 2 1 0 8 6 4 2 w aveform parameters: tr=8us td=20us fig.5 - junction capacitance vs. reverse voltage reverse voltage, (v) n o r m a l i z e d c a p a c i t a n c e - c j ( p f ) 0 3 . 5 3 2 . 5 2 1 0 5 1 0 1 5 2 0 3 0 1 . 5 0 . 5 line-to-gnd line-to-line f = 1mhz 2 5 rev :b qw -a7029 fig.4 - forward voltage vs. forward current f o r w a r d v o l t a g e , ( v ) forward current,(a) 0 0 1 2 3 4 5 6 1 2 1 0 8 6 4 2 w aveform parameters: tr=8us td=20us c o m c h i p s m d d i o d e s p e c i a l i s t
b c d d d 2 d 1 e f p p 0 p 1 t s o t - 3 8 3 f s y m b o l a w w 1 ( m m ) ( i n c h ) 0 . 0 7 7 0 . 0 0 4 0 . 0 9 1 0 . 0 0 4 0 . 0 2 9 0 . 0 0 4 0 . 0 6 1 + 0 . 0 0 4 7 . 0 0 8 0 . 0 4 2 . 3 6 2 m i n . 0 . 5 1 2 0 . 0 0 8 s y m b o l ( m m ) ( i n c h ) 0 . 0 6 9 0 . 0 0 4 0 . 1 3 8 0 . 0 0 2 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 0 0 9 0 . 0 0 2 0 . 3 1 5 0 . 0 0 8 0 . 5 3 1 m a x . 1 . 9 6 0 . 1 0 2 . 3 1 0 . 1 0 4 . 0 0 0 . 1 0 1 . 5 5 + 0 . 1 0 3 . 5 0 0 . 0 5 1 . 7 5 0 . 1 0 6 0 . 0 m i n . 1 3 . 0 0 . 2 0 0 . 7 4 0 . 1 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 0 . 2 2 0 . 0 5 8 . 0 0 0 . 2 0 1 3 . 5 m a x . 1 7 8 1 page 4 comchip t echnology co., l td. smd esd protection diode s o t - 3 8 3 f rev :b qw -a7029 o 1 2 0 t railer device leader 50 pitches 160 pitches ....... ....... ....... ....... ....... ....... ....... ....... end start d 1 d 2 d w 1 t c direction of feed reel t aping specification c o m c h i p s m d d i o d e s p e c i a l i s t i n d e x h o l e d e f b w p p 0 p 1 a
page 5 rev :b comchip t echnology co., l td. smd esd protection diode part number CPDVR083V3UA marking code e.3v3 marking code suggested p ad layout size (inch) 0.025 (mm) 0.630 0.300 0.500 0.012 0.020 sot -383f 0.450 0.018 e 2.150 0.085 standard packaging case t ype qty per reel (pcs) 3,000 sot -383f reel size (inch) 7 a b c d e b a d c f f 1.800 0.071 e.3v3 qw -a7029 c o m c h i p s m d d i o d e s p e c i a l i s t
|
